| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -1.9A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 2.5W |
| Description & Applications | P-channel Enhancement mode mosfet super high dense cell design for extremely low Rds（on）； high power and current handing capability |
| 描述与应用 | P沟道增强型MOSFET 超高密电池设计极低的RDS（ON）; 高功率和电流移交能力 |