| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.45GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 25 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | NPN SILICON RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,designed for low noise, high frequency amplifier and high output oscillator applications. |
| 描述与应用 | NPN硅RF晶体管 中央的半导体CMPT5179类型是NPN硅RF晶体管 由外延平面工艺制造，环氧树脂成型的表面贴装封装，专为低噪音，高频率放大器和高输出振荡器 的应用程序。 |