| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 350mW/0.35W |
| Description & Applications | SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA42,CMPTA92 types are complementary surface mount epoxy molded silicon planar epitaxial transistors designed for high voltage applications. |
| 描述与应用 | 硅互补的高电压晶体管 产品描述： 中央半导体CMPTA42，CMPTA92类型是互补的表面贴装环氧树脂成型硅平面外延晶体管设计的高电压应用。 |