| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 60mΩ@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.4V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • 2.5V drive |
| 描述与应用 | P沟道MOS硅FET 超高速开关应用 特点 •低通态电阻。 •超高速开关。 •2.5V驱动 |