| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 88mΩ@ VGS = -1.8V, ID = -0.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.4V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel MOS Silicon FET General purpose switching device applications Features • Low ON-resistance. • High-speed switching. • 1.8V drive. |
| 描述与应用 | P沟道MOS硅FET 通用开关设备应用程序 特点 •低导通电阻。 •高速开关。 •1.8V驱动。 |