| 最大源漏极电压VdsDrain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 310mΩ@ VGS = 4V, ID = 1.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.2~2.6V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 特点 ·低导通电阻。 ·超高速开关。 ·4V驱动器。 |