| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-EmitterVoltage(VCEO) | 60V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 125MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 10000 @ 5V,0.1A |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | 1.5V |
| 耗散功率PcPower Dissipation | 1.2W |
| Description & Applications | •The CENTRAL SEMICONDUCTOR CXTA27 type is a NPN silicon darlington Transistor 。 •Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. |
| 描述与应用 | •中央的半导体CXTA27类型是一个NPN硅达林顿晶体管。 •硅达林顿晶体管由外延平面工艺制造，环氧树脂成型的表面贴装封装，设计要求非常高增益的应用。 |