| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 900V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 450V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 20MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 12 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications. |
| 描述与应用 | NPN硅极高压晶体管 该中南半导体CZTUX87的类型是NPN硅功率晶体管环氧树脂模压在一个表面贴装封装，高电压开关应用而设计。 |