| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 60 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Feature •Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •The SC−75/SOT−416 package can be soldered using wave or reflow.The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. •Pb−Free Packages are Available |
| 描述与应用 | 特点 •偏置电阻晶体管PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数量 •SC-75/SOT-416包装可以使用波或回流焊接。修改后的鸥翅引线过程中吸收热应力 除焊接的模具损坏的可能性。 •无铅包可用 |