| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | -500mA/0.5A |
| 基极输入电阻R1 Input Resistance(R1) | 1KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.1 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | 260MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features •-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors) •VCE (sat) is lower than conventional products. •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. •Only the on / off conditions need to be set for operation, making the device design easy. |
| 描述与应用 | 特点 •500毫安/-12V低VCE（sat）的数字晶体管（内置电阻）VCE（sat）的是比传统产品低。 •内置启用偏置电阻器的配置，逆变电路没有连接外部输入电阻（见等效电路）。 •偏置电阻组成的薄膜电阻完全隔离，允许正面偏置输入。他们也有优势，几乎完全消除了寄生效应。 •只有开/关条件需要设置操作，使装置的设计容易。 |