| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 60mΩ@ VGS = -2.5V, ID = -0.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.4V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 2.5V drive. |
| 描述与应用 | P-沟道硅MOSFET 超高速开关应用 特点 •低导通电阻。 •高速开关。 •2.5V驱动。 |