| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 155MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 270~1200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 340mV/0.34V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2 W POWER DISSIPATION 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 17mv Typ. Extremely Low Equivalent On-resistance COMPLEMENTARY Type - FCX1151A |
| 描述与应用 | SOT89 NPN硅功率（开关）晶体管 2W功耗 10A峰值脉冲电流 优秀HFE特性可达10安培 极低的饱和电压，例如17MV典型。 极低的等效导通电阻 互补型 - FCX1151A |