| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 110MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -230mV/-0.23VV |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance |
| 描述与应用 | PNP硅POWER（开关）晶体管 特点 *2W功耗 *10A峰值脉冲电流 *优秀HFE特性 *极低的饱和电压 *极低的等效导通电阻; |