| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -5.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 52mΩ@ VGS = -2.5V, ID = -4.4A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.6~-1.5V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • DC-DC converters • Load switch • Power management Features • Fast switching speed • High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | P沟道2.5V额定功率沟道MOSFET 概述 此P沟道2.5V指定的MOSFET采用了坚固的门版本飞兆半导体的先进功率沟槽过程。它已被优化的电源管理应用广泛的栅极驱动电压（2.5V - 12V）。 应用 •DC-DC转换器 •负荷开关 •电源管理 特点 •开关速度快 •高性能沟道技术极低的RDS（ON） |