| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 200mΩ@ VGS = -1.8V, ID = -1.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.5V |
| 耗散功率PdPower Dissipation | 960mW/0.96W |
| Description & Applications | Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Power management • Load switch Features • High performance trench technology for extremely low RDS(ON) • Super SOTTM -6 package: small footprint |
| 描述与应用 | 双P沟道1.8V指定的PowerTrench MOSFET 概述 这些P沟道1.8V指定MOSFET采用飞兆半导体先进的功率沟槽进程，已特别定制生产 尽量减少对通态电阻和出色的开关性能但为保持低栅极电荷。 应用 •电源管理 •负荷开关 特点 •高性能沟道技术极低的RDS（ON） •超级SOTTM-6包装：占地面积小 |