| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 95mΩ@ VGS = 2.5V, ID =2.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.5 |
| 耗散功率PdPower Dissipation | 960mW/0.96W |
| Description & Applications | Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications · DC/DC converter · Battery Protection · Power Management Features · Low gate charge · High performance trench technology for extremely low RDS(ON) · High power and current handling capability |
| 描述与应用 | 双N沟道2.5V指定的PowerTrench MOSFET 概述 这双N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 ·DC/ DC转换器 ·电池保护 ·电源管理 特点 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·高功率和电流处理能力 |