| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 3A/-2.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 95mΩ@ VGS = 2.5V, ID =2.5A/190mΩ@ VGS = -2.5V, ID = -1.8A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.5V/-0.6~-1.5V |
| 耗散功率PdPower Dissipation | 960mW/0.96W |
| Description & Applications | 20V N & P-Channel Power Trench MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications · DC/DC converter · Load switch · LCD display inverter Features · Low gate charge · High performance trench technology for extremely low RDS(ON). · Super SOT –6 package |
| 描述与应用 | 20V N＆P沟道功率沟道MOSFET 概述 这些N＆P沟道MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些设备已设计提供特殊功耗在一个非常小的空间更大更昂贵的SO-8和TSSOP-8封装的应用中是不切实际的。 应用 ·DC/ DC转换器 ·负荷开关 ·液晶显示器逆变器 特点 ·低栅极电荷 ·高性能沟道技术极低的RDS（ON）。 ·超级SOT-6包装 |