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商品参数:

  • 型号:FDG6303N
  • 厂家:FAIRCHILD
  • 批号:05+NOPB500
  • 整包数量:3000
  • 最小起批量:10
  • 标记/丝印/代码/打字:3
  • 封装:SOT-363/SC70-6
  • 技术文档:下载

最大源漏极电压VdsDrain-Source Voltage25V
最大栅源极电压Vgs(±)Gate-Source Voltage8V
最大漏极电流IdDrain Current500mA/0.5A
源漏极导通电阻RdsDrain-Source On-State Resistance0.6Ω@ VGS = 2.7V, ID =200mA
开启电压Vgs(th)Gate-Source Threshold Voltage0.65~1.5V
耗散功率PdPower Dissipation300mW/0.3W
Description & ApplicationsDual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits . Compact industry standard SC70-6 surface mount package.
描述与应用双N沟道,数字FET 概述    这些双N沟道逻辑电平增强模式场效应晶体管都采用飞兆半导体专有的,高细胞密度,DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计,尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路。 紧凑型工业标准SC70-6表面贴装封装。
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FDG6303N
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