| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 1.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.070Ω/Ohm @17.7A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | N-Channel 2.5V Specified PowerTrench TM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremelyow RDS(ON) High power and current handling capability. |
| 描述与应用 | N沟道2.5V指定的PowerTrench TM MOSFET 概述 这N沟道2.5V指定的MOSFET的生产 采用飞兆半导体先进的PowerTrench 过程中，已特别针对减少通态电阻，但维持低栅极电荷 优越的开关性能。 •低栅极电荷（3.5nC典型值）。 •高性能沟道技术为extremelyow RD（ON） 高功率和电流处理力 |