| 最大源漏极电压VdsDrain-Source Voltage | 30V/-30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V/20V |
| 最大漏极电流IdDrain Current | 7A/-5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 40mΩ@ VGS =4.5V, ID =6A/80mΩ@ VGS =-4.5V, ID =-4A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~3V/-1~-3V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | Dual N & P-Channel Power Trench MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features · Fast switching speed · Low gate charge · High performance trench technology for extremely low RDS(ON) · High power and current handling capability |
| 描述与应用 | 双N＆P沟道功率沟槽MOSFET 概述 这些双N和P沟道增强模式功率场效应晶体管都采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 特点 ·快速开关速度 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·高功率和电流处理能力 |