| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -25V |
| 最大漏极电流IdDrain Current | -5.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 80mΩ@ VGS = -4.5V, ID = -4A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1~-3V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | 30V P-Channel Power Trench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability |
| 描述与应用 | 30V P沟道功率沟槽MOSFET 概述 P沟道MOSFET是一种坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化需要给驱动器的额定电压（4.5V - 25V）的范围广泛的电源管理应用。 应用 •电源管理 •负荷开关 •电池保护 特点 •低栅极电荷 •开关速度快 •高性能沟道技术极低的RDS（ON） •高功率和电流处理能力 |