| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | Si N-channel Junction FET • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic |
| 描述与应用 | N沟道结型场效应管 特别适合用于音频，电话电容话筒 •优秀的电压特性 •出色的瞬态特性 |