| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率PcPower Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS suitable for use in high speed, low current switching applications |
| 描述与应用 | SOT23 NPN硅平面高速开关晶体管 适合于使用在高速，低电流开关应用 |