| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 170V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR |
| 描述与应用 | SOT23 NPN硅平面中功率高性能晶体管 |