| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -2.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 375 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -210mV/-0.21V |
| 耗散功率PcPoWer Dissipation | 625mW/0.625W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTORS FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat) |
| 描述与应用 | PNP硅平面高增益 中等功率晶体管 特点 非常低的等效导通电阻 |