| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 650MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 NPN SILICON PLANAR RF TRANSISTOR High fT=650MHz Maximum capacitance 0.7pF Low noise < 5dB at 500MHz |
| 描述与应用 | SOT23 NPN硅平面RF晶体管 高FT =650MHz 最大容量的0.7 pF 频率为500MHz时低噪声<5dB |