| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
30V/-30V |
| 集电极连续输出电流IC Collector Current(IC) |
30mA/-500mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
100KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
100KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
200KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
100KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
2 |
| 直流电流增益hFE DC Current Gain(hFE) |
270/120 |
| 截止频率fT Transtion Frequency(fT) |
250MHz/200MHz |
| 耗散功率Pc Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features •Power management (dual digital transistors) •Two digital transistors in a SMT package. •up to 500mA can be driven •low Vce(sat) of driven transistors for low power dissipation |
| 描述与应用 |
特点 •电源管理（双数字晶体管） •两个数字晶体管在SMT包装。 •高达500mA的电流可以驱动 •低Vce（sat）的驱动晶体管以实现低功耗 |