| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -120V/120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -120V/120V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA/50mA |
| 截止频率fT Transtion Frequency(fT) | 140MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 180~820 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features •General purpose(dual transistors) •Both the 2SA1514K and 2SC3906K chips in an SMT package. •PNP and NPN chips are connecter in a common emitter. |
| 描述与应用 | 特点 •通用（双晶体管） •两个的2SA1514K2SC3906K芯片在SMT封装。 •PNP和NPN芯片是在一个共同的发射极连接器 |