| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -11V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| Q1基极输入电阻R1 Input Resistance(R1) | 400MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 140~560 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -220mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 1300mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • PNP Epitaxial Planar Silicon Transistor/Composite Schottky Barrier Diode • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. • The FP102 is formed with 2chips, one being equivalent to the 2SB1396 and the other the SB07-03C, placed in one package. • DC-DC Converter Applications |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •PNP外延平面硅晶体管/复合肖特基二极管 •复合型与PNP晶体管和肖特基势垒二极管中包含一个包，便于高密度安装。 •FP102上形成有2个芯片，一个相当于2SB1396和SB07-03C，放置在一个包装。 •DC-DC转换器应用 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |