| 三极管BJT类型 TYPE | NPN |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | 2A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 150MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | 100mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | 0.18~0.4V |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 30V |
| 二极管DIODE正向整流电流Io Rectified Current | 700mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 550mV |
| 耗散功率Pc Power Dissipation | 800mW |
| Description & Applications | Features • TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode • DC-DC Converter Applications • Composite type with 2 devices (NPN transistor and Schottoky barrier diode) contained in one package, facilitating high-density mounting. • The FP301 is formed with a chip being equivalent to the 2SD1621 and a chip being equivalent to the SB07-03C placed in one package. |
| 描述与应用 | 特点 •TR：NPN平面外延硅晶体管 SBD：肖特基二极管 •DC-DC转换器应用 •复合型，有2个设备（NPN晶体管和垒二极管Schottoky）包含在一个包装，促进高密度安装。 •FP301上形成有一个芯片，相当于2SD1621和芯片相当于放置在一个包装，SB07-03C。 |