| Description & Applications | N-Channel QFET ® MOSFET 200 V, 7.6 A, 360 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ®s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 14 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Low level gate drive requirement allowing direct operation from logic drivers |