| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -5A |
| 截止频率fTTranstion Frequency(fT) | 115MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~245 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 2.5W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES * VCEO= -12V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain |
| 描述与应用 | PNP硅平面中功率高增益晶体管 特点 * VCEO=-12V *5安培连续电流 *20安培脉冲电流 *低饱和电压 *增益高 |