| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Gain of 400 at IC=2 Amps and low saturation voltage Extremely low equivalent on-resistance Flash gun convertors and Battery powered circuits COMPLEMENTARY TYPE - FZT789B |
| 描述与应用 | SOT223 NPN硅平面中功率高增益晶体管 IC= 2A时增益达400 低饱和电压 极低的等效导通电阻 闪光枪转换器和电池供电电路 互补型 - FZT789B |