| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 180V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 70MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 2W |
| Description & Applications | SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Gain of 500 at IC=100mA Very low saturation voltage Darlington replacement Battery powered circuits |
| 描述与应用 | SOT223 NPN硅平面中功率高增益晶体管 当IC=100MA时增益为500 非常低的饱和电压 达林顿更换 电池供电电路 |