| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 200V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流ICCollector Current(IC) | 6A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 375mV/0.375V |
| 耗散功率PcPower Dissipation | 3W |
| Description & Applications | SOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS Extremely low equivalent on-resistance; RCE(sat) =44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps |
| 描述与应用 | SOT223 NPN硅平面高电流（高性能）晶体管 极低的等效导通电阻;在5A时RCE（饱和）=44mΩ 6安培连续电流，高达20安培的峰值电流 极低的饱和电压 优秀HFE 高达10安培的特性 |