| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -6A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −450mV/-0.45V |
| 耗散功率PcPoWer Dissipation | 3W |
| Description & Applications | PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES Extremely low equivalent on-resistance 6 Amps continuous current Up to 20 Amps peak current Very low saturation voltage Excellent hFE characteristics specified upto 20 Amps |
| 描述与应用 | PNP硅平面高电流晶体管 特点 极低的等效导通电阻 6安培连续电流 高达20安培的峰值电流 非常低的饱和电压 优秀HFE特性高达20安培 |