| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -6A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~1000 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −450mV/-0.45V |
| 耗散功率PcPoWer Dissipation | 3W |
| Description & Applications | PNP SILICON PLANAR HIGH CURRENT POWER TRANSISTOR FEATURES Extremely low equivalent on-resistance 6 Amps continuous current High gain and very low saturation voltage |
| 描述与应用 | PNP硅平面高电流电源晶体管 特点 极低的等效导通电阻 6安培连续电流 高增益，非常低的饱和电压 |