| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.212765957 |
| 直流电流增益hFE DC Current Gain(hFE) | 85-370 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features Medium speed switching resistor built-in TYPE NPN transistor Resistors built-in TYPE Comlementary to GN1A4P |
| 描述与应用 | 特性 中速开关电阻内置型NPN晶体管 电阻器内置型 对管是 GN1A4P |