| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.079Ω @-1A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.4V |
| 耗散功率PdPower Dissipation | 850mW/0.85W |
| Description & Applications | • Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting |
| 描述与应用 | •低导通电阻 RDS（ON）=79MΩ（典型值）。 （VGS=-4.5 V） •低驱动电流。 •2.5 V门驱动装置。 •高密度安装 |