| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | SILICON NPN EPITAXIAL TYPE TRANSISTOR For 1.5V And 3V Electronic Flash Use. Charger-up time is about 1 mS faster than of a germanium transistor. Small saturation voltage can bring less power dissipation and flashing times. |
| 描述与应用 | NPN外延型晶体管 对于1.5V和3V电子闪光灯使用。 充电时间是约1毫秒的速度比锗晶体管。 小饱和电压可以带来更少的功耗和闪烁时间。 |