| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT1015被设计用于在驱动级的AF放大器和通用放大。 |