| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1.6V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT2907A is designed for general purpose amplifier and high speed switching, medium power switching applications. Features • Low Collector Saturation Voltage • High Speed Switching • Complementary toHMBT2222A |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT2907A为通用放大器和高速切换，中等功率开关应用而设计的。 特点 •低集电极饱和电压 •高速开关 •互补型toHMBT2222A |