| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 700mA/0.7A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 225mW/0.225W |
| Description & Applications | NPN EPITAXIAL TRANSISTOR The HMBT8050 is designed for general purpose amplifier applications. High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550 |
| 描述与应用 | NPN外延晶体管 专为通用放大器的应用程序。 高DC电流在IC=150MA时HFE=150-400 对管HMBT8550 |