最大源漏极电压VdsDrain-Source Voltage | 20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
最大漏极电流IdDrain Current | 100mA/0.1A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 50Ω@ VGS = 1.2V, ID =1mA |
开启电压Vgs(th)Gate-Source Threshold Voltage | 0.5~1V |
耗散功率PdPower Dissipation | 200mW/0.2W |
Description & Applications | For Portable Devices High Speed Switching Applications Interface Applications • High input impedance and extremely low drive current • Vth is low and it is possible to drive directly at low-voltage CMOS • Suitable for high-density mounting because of a compact package |
描述与应用 | 用于便携式设备 高速开关应用 接口应用 •高输入阻抗和极低的驱动电流 •Vth是低,并有可能在低电压CMOS直接驱动 •适用于高密度安装,因为一个紧凑的封装 |