| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -500mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 200MHz |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 120~390 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | -600mV |
| Q2基极输入电阻R1 Input Resistance(R1) | 300mW |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | Features • General Purpose Transistor (Isolated Dual Transistors) • Two 2SA1036K chips in an SMT package. • Same size as SMT3 package, so same mounting machine can be used for both. • Transistor elements are independent, eliminating interference. • High collector current. IC = –500mA • Mounting cost, and area, are reduced by one half. |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 特点 •通用晶体管（隔离双晶体管） •两个2SA1036K芯片在SMT封装。 •SMT3封装尺寸相同，所以相同的安装机器可以同时用于。 •晶体管元素是独立的，消除干扰。 •高集电极电流。 IC=-500毫安的 •安装成本和面积，减少了一半。 |
| 直流电流增益hFE DC Current Gain(hFE) | |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | |
| 描述与应用 | |