| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
40V/-40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
32V/-32V |
| 集电极连续输出电流IC Collector Current(IC) |
500mA/-500mA |
| 截止频率fT Transtion Frequency(fT) |
250MHz/200MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~560/120~560 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
600mV/-600mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features • General purpose transistor (dual transistors) • Includes a 2SA1036K and a 2SC411K transistor in a SMT package. • Mounting possible with SMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • High collector current. IC=500mA • Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 •通用晶体管（双晶体管） •在SMT包装包括一个2SA1036K的和一个2SC411K晶体管。 •安装可能与SMT3可能自动装配机。 •晶体管元素是独立的，消除干扰。 •高集电极电流。 IC=500毫安 •安装成本和面积可减少一半。 |