| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. Switching Transistor complement to KN3906S Low leakage current: ICEX=50nA(max)@VCE=-30V，VEB=3V。 Low Saturation current: VCE=0.3V(max)@Ic=50mA，IB=5mA |
| 描述与应用 | 外延平面NPN晶体管 通用应用。 开关晶体管 对管KN3906SS 低漏电流 低饱和电流 |