| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
100MA |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
-100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
|
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
200MHZ/200MHZ |
| 耗散功率Pc Power Dissipation |
0.2W |
| Description & Applications |
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
* Including two devices in TESV.
(Thin Extereme Super mini type with 5 pin.)
* With Built-in bias resistors.
* Simplify circuit design.
* Reduce a quantity of parts and manufacturing process.
|
| 描述与应用 |
外延平面NPN / PNP晶体管
切换应用程序。
接口电路和驱动电路的应用。
特性
*在TESV包括两个设备。
(薄Extereme超级迷你类型5针。)
*内置偏置电阻。
*简化电路设计。
*减少数量的零部件和制造过程。
|