| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
|
| 直流电流增益hFE DC Current Gain(hFE) |
120 |
| 截止频率fT Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •Including two devices in TES6.(Thin Extreme Super mini type with 6 pin.) •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process. |
| 描述与应用 |
特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •包括两个设备（薄至尊超级迷你型6针）。在TES6。 •内置偏置电阻器。 •简化电路设计。 •减少了部件数量和制造工艺。 |