| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 200V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 200V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 500MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 40 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | High Voltage Transistor NPN Epitaxial Silicon Transistor |
| 描述与应用 | 高电压晶体管 NPN外延硅晶体管 |